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Categoriae Productorum
Producta Insignia
C19160 mixtura aeris altae firmitatis

C19160 mixtura aeris altae firmitatis
Aes C26000 (CuZn30) – Ad profundam delineationem, impressionem et formationem

Aes C26000 (CuZn30) – Ad profundam delineationem, impressionem et formationem
Cuprum phosphorium C51100 altae conductivitatis

Cuprum phosphorium C51100 altae conductivitatis
C54400 Mixtura Cuprea

C54400 Mixtura Cuprea
C17300 Mixtura Cuprea

C17300 Mixtura Cuprea
C17200 Lamina Cuprea Beryllium Altae Elasticae

C17200 Lamina Cuprea Beryllium Altae Elasticae
C36000 Plumbum Aeris

C36000 Plumbum Aeris
C11000 Lamina aeris puri

C11000 Lamina aeris puri
C10100 Tubus aeneus sine oxygenio

C10100 Tubus aeneus sine oxygenio
OFT sine oxygenio, tellurium cuprum altae conductivitatis

OFT sine oxygenio, tellurium cuprum altae conductivitatis
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C14700 Sulphur Cuprum Productionem Efficiorem Facit (2).jpg
Aes Plumbum---Melior Resistentia Attritionis (1).jpg
Cuprum ex mixtura cuprea libere secandum, sulfurum, cupreum.jpg
Materia Eximius Cupri Mixti --- Cuprum Beryllium (2).jpg

Cuprum sine oxygenio altae puritatis

Cuprum sine oxygenio (cuprum sine oxygenio, OFC) per liquefactionem in vacuo + processum reductionis carbonis, contentum oxygenii ≤0.001% (10 ppm), puritas usque ad 99.99%, interferentiam oxidi cupri (Cu₂O) in conductivitatem omnino eliminat. Eius conductivitas electrica est ≥101% IACS, quae significanter emendata est comparata cum cupro ordinario (100% IACS), et potest iacturam transmissionis signalis altae frequentiae reducere, quod aptum est stationibus basi communicationis 5G, componentibus RF satellitum, et aliis condicionibus.

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    Proprietates technicae: stabilis et fidus, aptus ad condiciones difficiles

    • Resistentia fragilitati hydrogenii: nullum oxidum limitis granorum, vitanda reactio cum hydrogenio ad bullas formandas, apta tubis vacuis, acceleratoribus particularum et aliis instrumentis.
    • Super ductilitas: elongatio > 40%, impressionem in laminam tenuissimam 0.03mm pro substrato tabulae circuitus flexibilis (FPC) sustinet.
    • Resistentia altae temperaturae: nullum periculum oxidationis limitis granorum infra 400℃, ad necessitates obductionis altae temperaturae scopi semiconductoris sputtering occurrendas.

    Scenario applicationis: Solve difficultates industriae

    1. Fabricatio microplagulae: Scopus cupri C10100 sine oxygenio uniformiter deponitur, quo proventus strati metallizationis lamellae augetur.
    2. Funis altae frequentiae: Funis coaxialis OFC attenuationem signorum minuit et stabilitatem transmissionis datorum radar undarum millimetricarum praestat.
    3. Apparatus superconducens: resistentia spiralis cupreae OFHC sine oxygenio ad nihilum appropinquat, operationem efficientem magnetum MRI adiuvans.

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